EE220 2024 Noise Analysis and Simulation: Difference between revisions
Jump to navigation
Jump to search
(Created page with "* '''Instructions''': This activity is structured as a tutorial with an activity at the end. Should you have any questions, clarifications, or issues, please contact your instructor as soon as possible. * At the end of this activity, the student should be able to: # Perform noise simulations using NGSPICE. == Activity 1: NMOS Noise == Bias a 0.8V SLVT NMOS transistor with <math>V_{GS}=0.4\mathrm{V}</math> and <math>V_{DS}=0.4\mathrm{V}</math>. For a width of <math>1\ma...") |
No edit summary |
||
| Line 1: | Line 1: | ||
* '''Instructions''': This activity is structured as a tutorial with an activity at the end. Should you have any questions, clarifications, or issues, please contact your instructor as soon as possible. | * '''Instructions''': This activity is structured as a tutorial with an activity at the end. Should you have any questions, clarifications, or issues, please contact your instructor as soon as possible. | ||
* At the end of this activity, the student should be able to: | * At the end of this activity, the student should be able to: | ||
# Perform noise simulations using | # Perform noise simulations using Cadence Spectre using the GlobalFoundries 22nm FDSOI design kit. | ||
== Activity 1: NMOS Noise == | == Activity 1: NMOS Noise == | ||
Bias a 0.8V SLVT NMOS transistor with <math>V_{GS}=0.4\mathrm{V}</math> and <math>V_{DS}=0.4\mathrm{V}</math>. For a width of <math>1\mathrm{\mu m}</math> and a length of <math>L_{\min}</math>: | Bias a 0.8V SLVT NMOS transistor with <math>V_{GS}=0.4\mathrm{V}</math> and <math>V_{DS}=0.4\mathrm{V}</math>. For a width of <math>1\mathrm{\mu m}</math> and a length of <math>L_{\min}</math>: | ||
* What is the resulting DC drain current? | * What is the resulting DC drain current? | ||
* What is the transistor's <math>g_m</math> and <math>V^*=\frac{2I_D}{g_m}</math>? | |||
Revision as of 23:17, 7 October 2024
- Instructions: This activity is structured as a tutorial with an activity at the end. Should you have any questions, clarifications, or issues, please contact your instructor as soon as possible.
- At the end of this activity, the student should be able to:
- Perform noise simulations using Cadence Spectre using the GlobalFoundries 22nm FDSOI design kit.
Activity 1: NMOS Noise
Bias a 0.8V SLVT NMOS transistor with and . For a width of and a length of :
- What is the resulting DC drain current?
- What is the transistor's and ?
