EE220 2024 Noise Analysis and Simulation

• Instructions: This activity is structured as a tutorial with an activity at the end. Should you have any questions, clarifications, or issues, please contact your instructor as soon as possible.
• At the end of this activity, the student should be able to:

1. Perform noise simulations using Cadence Spectre using the GlobalFoundries 22nm FDSOI design kit.

Activity 1: NMOS Noise

Bias a 0.8V SLVT NMOS transistor with $V_{GS}=0.4\mathrm {V}$ and $V_{DS}=0.4\mathrm {V}$. For a width of $1\mathrm {\mu m}$ and a length of $L_{\min }$:

• What is the resulting DC drain current?
• What is the transistor's $g_{m}$ and $V^{*}={\frac {2I_{D}}{g_{m}}}$?